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| Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 7.50.2 Unit: mm 4.50.2 10.80.2 s Features q q q 3.80.2 High collector to base voltage VCBO High collector to emitter VCEO Allowing automatic insertion with radial taping 90 0.650.1 0.850.1 2.50.1 1.00.1 0.8C 0.70.1 0.70.1 0.8C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 900 800 7 2 1 1.5 150 -55 to +150 Unit V V V A A W C C 16.01.0 0.50.1 2.50.2 0.8C 2.50.2 0.40.1 2.050.2 1 2 3 1:Emitter 2:Collector 3:Base MT3 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (Ta=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 500mA IC = 200mA, IB = 40mA IC = 200mA, IB = 40mA VCB = 10V, IE = -50mA, f = 200MHz IC = 200mA, IB1 = 40mA, IB2 = -80mA, VCC = 250V 80 1 3 1 800 6 3 1.5 1 V V MHz s s s min typ max 50 50 Unit A A V 1 Power Transistors PC -- Ta 2.0 Without heat sink 1.2 TC=25C IB=200mA 1.0 2SC4985 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 3 IC/IB=5 VCE(sat) -- IC TC=100C 25C 1 Collector power dissipation PC (W) Collector current IC (A) 1.6 0.8 1.2 0.6 0.8 0.4 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 0.3 -25C 0.1 0.4 0.2 10mA 0.03 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.01 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 3 25C 1 TC=-25C 100C 0.3 IC/IB=5 100 hFE -- IC 1000 VCE=5V fT -- IC VCE=10V f=200MHz TC=25C Forward current transfer ratio hFE 30 25C TC=100C Transition frequency fT (MHz) 0.3 1 3 300 100 30 10 3 1 0.3 0.1 0.001 0.003 10 -25C 3 0.1 1 0.03 0.3 0.01 0.01 0.03 0.1 0.3 1 0.1 0.01 0.03 0.1 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) 2 |
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